Effect of Rubidium Fluoride on Grain Sintering and Optoelectronic Properties of Nanostructured CuInSe2 Thin Films Obtained by Solution Processing

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dc.creatorRuiz, Jhoan
dc.creatorMurray, Anna
dc.creatorHandwerker, Carol
dc.creatorRamírez, Daniel
dc.creatorAgrawal, Rakesh
dc.date2023-07-31
dc.date.accessioned2025-10-01T23:52:52Z
dc.descriptionChalcopyrite CuInSe2 (CISe) and Cu(In, Ga)(S, Se)2 (CIGS) absorber layers, have emerged as promising alternatives in the solar cell field due to their unique properties such as power conversion efficiencies (PCEs) above 20 %, direct bandgap, and high absorption coefficient. This enables the making of high-quality PV devices with absorbers from 2 μm thick, significantly reducing the use of raw materials. Additionally, the CISe absorber layer is a desirable material for Perovskite/CIS tandem configuration with a narrow band gap at the bottom that has demonstrated PCEs close to 25 %, and potential applications in lightweight and/or flexible substrates. Recently, the addition of alkali elements such as sodium, potassium, rubidium, and cesium via post-deposition techniques (PDTs) has demonstrated an improvement in CIGS-based solar cells’ performance. In this study, 10, 20, and 30 nm thick layers of rubidium fluoride were post-deposited on CISe-films made by solution processing techniques and then selenized under a selenium-argon atmosphere to improve the CISe photoelectronic properties such as the number of charge carriers collected and grain growth, critical characteristics to ensure useful photovoltaic devices. Thus, the effect of rubidium fluorine on CISe-based solar cells was analyzed using several characterization techniques. According to the results, thin films made by an amine-thiol mixture with uniform atomic composition were obtained. The crystallinity and grain growth improved with an increase in rubidium fluoride addition. Moreover, with 10 nm of rubidium fluoride, an improvement in the lifetime of the charge carrier, photoluminescence intensity, and the number of carriers collected by the solar cells was obtained.en-US
dc.descriptionLas capas absorbentes de calcopirita CuInSe2 (CISe) y Cu(In, Ga)(S, Se)2 (CIGS) han surgido como alternativas prometedoras en el campo de las celdas solares debido a sus propiedades únicas tales como, eficiencias de conversión de energía (PCE) por encima del 20 %, bandgap directo y el alto coeficiente de absorción. Esto permite fabricar dispositivos fotovoltaicos de alta calidad con capas absorbentes de 2 μm de espesor, reduciendo significativamente el uso de materias primas. Además, la capa absorbente de CISe es un material deseable para la configuración en tándem de Perovskita/CIS con un estrecho bandgap en la parte inferior que ha demostrado PCE cercanos al 25 % y potenciales aplicaciones en sustratos ligeros y/o flexibles. Recientemente, la adición de elementos alcalinos como el sodio, el potasio, el rubidio y el cesio, mediante técnicas de posdeposición (PDT), ha demostrado una mejora en el rendimiento de las celdas solares basadas en CIGS. En este estudio se depositaron capas de 10, 20 y 30 nm de espesor de fluoruro de rubidio sobre películas de CIGS fabricadas mediante técnicas de procesamiento en solución, y luego se selenizaron bajo una atmósfera de selenio-argón para mejorar propiedades foto-electrónicas como el número de portadores de carga recolectados y crecimiento de grano, características esenciales para la obtención de dispositivos fotovoltaicos funcionales. Así, se analizó el efecto del fluoruro de rubidio en las celdas solares basadas en CISe mediante varias técnicas de caracterización. Según los resultados, se obtuvieron películas delgadas fabricadas con una mezcla de amina y tiol con una composición atómica uniforme. La cristalinidad y el crecimiento del grano mejoraron con el aumento de la adición de fluoruro de rubidio. Además, con 10 nm de fluoruro de rubidio, se obtuvo una mejora en el tiempo de vida del portador de carga, la intensidad de fotoluminiscencia y el número de portadores obtenidos por las celdas solares.es-ES
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dc.identifierhttps://revistas.itm.edu.co/index.php/tecnologicas/article/view/2587
dc.identifier10.22430/22565337.2587
dc.identifier.urihttps://hdl.handle.net/20.500.12622/7860
dc.languageeng
dc.publisherInstituto Tecnológico Metropolitano (ITM)es-ES
dc.relationhttps://revistas.itm.edu.co/index.php/tecnologicas/article/view/2587/2905
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dc.rightsDerechos de autor 2023 TecnoLógicases-ES
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/4.0es-ES
dc.sourceTecnoLógicas; Vol. 26 No. 57 (2023); e2587en-US
dc.sourceTecnoLógicas; Vol. 26 Núm. 57 (2023); e2587es-ES
dc.source2256-5337
dc.source0123-7799
dc.subjectChalcopyrite solar cellsen-US
dc.subjectnanostructured filmsen-US
dc.subjectsolution processingen-US
dc.subjectoptoelectronic properties of CuInSe2en-US
dc.subjectrubidium fluoride post-treatmenten-US
dc.subjectCélulas solares de calcopiritaes-ES
dc.subjectpelículas nanoestructuradases-ES
dc.subjectprocesamiento en soluciónes-ES
dc.subjectpropiedades optoelectrónicas de CuInSe2es-ES
dc.subjecttratamiento posterior con fluoruro de rubidioes-ES
dc.titleEffect of Rubidium Fluoride on Grain Sintering and Optoelectronic Properties of Nanostructured CuInSe2 Thin Films Obtained by Solution Processingen-US
dc.titleEfecto del fluoruro de rubidio en las propiedades optoelectrónicas de películas delgadas de CuInSe2 nanoestructuradas obtenidas por procesos por solución.es-ES
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.typeResearch Papersen-US
dc.typeArtículos de investigaciónes-ES

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