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<front>
<journal-meta>
<journal-id journal-id-type="redalyc">3442</journal-id>
<journal-title-group>
<journal-title specific-use="original" xml:lang="es">TecnoLógicas</journal-title>
</journal-title-group>
<issn pub-type="ppub">0123-7799</issn>
<issn pub-type="epub">2256-5337</issn>
<publisher>
<publisher-name>Instituto Tecnológico Metropolitano</publisher-name>
<publisher-loc>
<country>Colombia</country>
<email>tecnologicas@itm.edu.co</email>
</publisher-loc>
</publisher>
</journal-meta>
<article-meta>
<article-id pub-id-type="art-access-id" specific-use="redalyc">344256704003</article-id>
<article-id pub-id-type="doi">https://doi.org/10.22430/22565337.1064</article-id>
<article-categories>
<subj-group subj-group-type="heading">
<subject>Artículos de investigación</subject>
</subj-group>
</article-categories>
<title-group>
<article-title xml:lang="en">First principles calculations of the electronic and dielectric properties of λ-Ta2O5</article-title>
<trans-title-group>
<trans-title xml:lang="es">Cálculo de primeros principios de las propiedades electrónicas y
dieléctricas  

de λ-Ta2O5</trans-title>
</trans-title-group>
<alt-title alt-title-type="lt-running">TecnoLógicas, ISSN-p 0123-7799 / ISSN-e 2256-5337, Vol. 21, No. 43, sep-dic de
2018, pp. 43-52</alt-title>
</title-group>
<contrib-group>
<contrib contrib-type="author" corresp="no">
<name name-style="western">
<surname>Valencia-Balvín</surname>
<given-names>Camilo</given-names>
</name>
<xref ref-type="aff" rid="aff1"/>
<email>camilovalencia@itm.edu.co</email>
</contrib>
<contrib contrib-type="author" corresp="no">
<name name-style="western">
<surname>Pérez-Walton</surname>
<given-names>Santiago</given-names>
</name>
<xref ref-type="aff" rid="aff2"/>
<email>santiagoperez@itm.edu.co</email>
</contrib>
<contrib contrib-type="author" corresp="no">
<name name-style="western">
<surname>Osorio-Guillén</surname>
<given-names>Jorge M.</given-names>
</name>
<xref ref-type="aff" rid="aff3"/>
<email>mario.osorio@udea.edu.co</email>
</contrib>
</contrib-group>
<aff id="aff1">
<institution content-type="original">PhD. en Física,
Departamento de Electrónica y Telecomunicaciones, Facultad de Ingenierías,
Instituto Tecnológico Metropolitano, Medellín-Colombia,
camilovalencia@itm.edu.co</institution>
<institution content-type="orgname">Instituto Tecnológico Metropolitano</institution>
<country country="CO">Colombia</country>
</aff>
<aff id="aff2">
<institution content-type="original">PhD. en Física, Departamento de Electrónica y Telecomunicaciones, Facultad
de Ingenierías, Instituto Tecnológico Metropolitano, Medellín-Colombia,
santiagoperez@itm.edu.co</institution>
<institution content-type="orgname">Instituto Tecnológico Metropolitano</institution>
<country country="CO">Colombia</country>
</aff>
<aff id="aff3">
<institution content-type="original">PhD. en Física, Instituto de Física, Universidad de Antioquia,
Medellín-Colombia, mario.osorio@udea.edu.</institution>
<institution content-type="orgname">Universidad de Antioquia</institution>
<country country="CO">Colombia</country>
</aff>
<pub-date pub-type="epub-ppub">
<season>September-December 2019</season>
<year>2018</year>
</pub-date>
<volume>21</volume>
<issue>43</issue>
<fpage>43</fpage>
<lpage>52</lpage>
<history>
<date date-type="received" publication-format="dd mes yyyy">
<day>14</day>
<month>06</month>
<year>2018</year>
</date>
<date date-type="accepted" publication-format="dd mes yyyy">
<day>29</day>
<month>08</month>
<year>2018</year>
</date>
</history>
<permissions>
<copyright-statement>Los artículos publicados por la revista TecnoLógicas son obras literarias y científicas protegidas por las leyes de Derecho de Autor. Con la firma de la Declaración de Originalidad, así como con la entrega de la obra para su consideración o posible publicación, los autor autorizan de forma gratuita, al INSTITUTO TECNOLÓGICO METROPOLITANO –ITM- para la publicación, reproducción, comunicación, distribución y transformación de la obra e igualmente declaran bajo la gravedad del juramento que la obra es original e inédita de exclusiva autoría de los remitentes.</copyright-statement>
<copyright-year>2015</copyright-year>
<copyright-holder>Instituto Tecnológico Metropolitano</copyright-holder>
<ali:free_to_read/>
<license xlink:href="https://creativecommons.org/licenses/by-nc-sa/4.0/">
<ali:license_ref>https://creativecommons.org/licenses/by-nc-sa/4.0/</ali:license_ref>
<license-p>Esta obra está bajo una Licencia Creative Commons Atribución-NoComercial-CompartirIgual 4.0 Internacional.</license-p>
</license>
</permissions>
<abstract xml:lang="en">
<title>Abstract</title>
<p> Ta<sub>2</sub>O<sub>5</sub> is a wide-bandgap semiconductor that offers interesting applications in micro-wave communications, mainly related to the manufacture of filters and resonators whose size is inversely proportional to the dielectric constant of the material. For that reason, in this work we present a theoretical study, based on density functional theory (using PBEsol and hybrid HSE06 exchange-correlation functionals), of the electronic and dielectric properties of the orthorhombic model l-Ta<sub>2</sub>O<sub>5</sub>. We found that this model has a direct gap of 2.09 and 3.7 eV with PBEsol and HSE06, respectively. Furthermore, the calculated static dielectric constant, 51, is in good agreement with the reported values of other phases of this semiconductor.  </p>
</abstract>
<trans-abstract xml:lang="es">
<title>Resumen</title>
<p> Ta<sub>2</sub>O<sub>5</sub> es un semiconductor de gap-ancho el cual tiene interesantes aplicaciones en comunicaciones en la región de las micro-ondas, principalmente está relacionado con la fabricación de filtros y resonadores, donde su tamaño es inversamente proporcional a la constante dieléctrica del material. Por este motivo, en este trabajo presentamos un estudio teórico a partir de la teoría de los funcionales de la densidad (usando PBEsol y el híbrido HSE06 para el funcional de intercambio-correlación) de las propiedades electrónicas y dieléctricas del modelo ortorrómbico l-Ta<sub>2</sub>O<sub>5</sub>. Aquí, encontramos que este modelo tiene un gap directo de 2.09 y 3.7 eV con PBEsol y HSE06, respectivamente. Además, la constante dieléctrica estática calculada es 51, en buen acuerdo con los valores reportados para otras fases de este semiconductor.  </p>
</trans-abstract>
<kwd-group xml:lang="en">
<title>Keywords</title>
<kwd>Ta2O5</kwd>
<kwd>density functional theory</kwd>
<kwd>PBEsol</kwd>
<kwd>HSE06</kwd>
<kwd>dielectric constant</kwd>
</kwd-group>
<kwd-group xml:lang="es">
<title>Palabras clave</title>
<kwd>Ta2O5</kwd>
<kwd>teoría de los funcionales de
la densidad</kwd>
<kwd>PBEsol</kwd>
<kwd>HSE06</kwd>
<kwd>constante dieléctrica</kwd>
</kwd-group>
<counts>
<fig-count count="5"/>
<table-count count="2"/>
<equation-count count="3"/>
<ref-count count="23"/>
</counts>
</article-meta>
</front>
<body>
<sec>
<title/>
<p>
<disp-quote>
<p> Cómo citar / How to cite </p>
<p> C. Valencia-Balvín, S. Pérez-Walton, y Jorge M. Osorio-Guillén, First principles calculations of the electronic and dielectric properties of λ-Ta<sub>2</sub>O<sub>5</sub>. TecnoLógicas, vol. 21, no. 43, pp. 43-52, 2018.</p>
</disp-quote>
</p>
</sec>
<sec sec-type="intro">
<title>1. INTRODUCTION</title>
<p> For many years, semiconductors have been used in a wide variety of applications that have allowed developments, at a fairly accelerated rate, in several fields of science and engineering. In this context, wide-bandgap semiconductors have drawn great interest in recent years due to their applications in some areas of knowledge, such as electronics, communications and energy [<xref ref-type="bibr" rid="redalyc_344256704003_ref1">1</xref>]-[<xref ref-type="bibr" rid="redalyc_344256704003_ref3">3</xref>]. One of the semiconductors that offers great potential for this type of applications is Ta<sub>2</sub>O<sub>5</sub>. Its properties include high dielectric constant, low dielectric loss and good temperature stability. As a result, it can be used, for instance, as a dielectric resonator in microwave communication, where miniaturization critically depends on the dielectric constant of the ceramic component of the device. This indicates that a large dielectric constant, in principle, means a small size for the resonator [<xref ref-type="bibr" rid="redalyc_344256704003_ref2">2</xref>]. </p>
<p>Ta<sub>2</sub>O<sub>5</sub> has a set of crystallographic phases that
depend on temperature and pressure. To describe some of these phases, there are
experimental models which can adequately explain the different chemical and
physical properties associated with this compound [<xref ref-type="bibr" rid="redalyc_344256704003_ref4">4</xref>]. Among all the known
phases of this semiconductor, the modification of L-Ta<sub>2</sub>O<sub>5</sub>
without oxygen vacancies, reported in different experimental and theoretical
studies, awakens important interest [<xref ref-type="bibr" rid="redalyc_344256704003_ref5">5</xref>]-[<xref ref-type="bibr" rid="redalyc_344256704003_ref9">9</xref>]. Lee et al. [<xref ref-type="bibr" rid="redalyc_344256704003_ref10">10</xref>] proposed a model
to describe it based on its orthorhombic structure with two formula unit per
unit cell, called                      phase, where its local structure corresponds
to chains of distorted octahedral TaO<sub>6</sub>. In this work, we have
adopted such model to study the structural, electronic and optical properties
of the low-temperature modification. We indirectly compared our results with
experimental and theoretical values reported in other studies.</p>
</sec>
<sec sec-type="methods">
<title>2. COMPUTATIONAL
METHODS</title>
<sec sec-type="methods">
<title>2.1 Crystal and
electronic structure calculations</title>
<p> To study the physical properties of Ta<sub>2</sub>O<sub>5</sub>, we calculated the total energy as a function of the volume of the unit cell, completely relaxing the ionic positions and the shape of the unit cell for each one of the calculated volumes. Afterward, the obtained data were adjusted to the fourth-order Birch–Murnaghan equation of state [<xref ref-type="bibr" rid="redalyc_344256704003_ref11">11</xref>], [<xref ref-type="bibr" rid="redalyc_344256704003_ref12">12</xref>] and, based on it, we identified the equilibrium geometry [<xref ref-type="bibr" rid="redalyc_344256704003_ref4">4</xref>]. Total energy, the forces on the ions and the components of the stress tensor in this work were calculated using density functional theory (DFT). For the exchange–correlation functional, we used the generalized gradient approximation (GGA) with PBEsol parametrization [<xref ref-type="bibr" rid="redalyc_344256704003_ref13">13</xref>] and the hybrid functional HSE06 [<xref ref-type="bibr" rid="redalyc_344256704003_ref14">14</xref>], [<xref ref-type="bibr" rid="redalyc_344256704003_ref15">15</xref>]. The Kohn–Sham equations were solved using the projector augmented plane-wave (PAW) method [<xref ref-type="bibr" rid="redalyc_344256704003_ref16">16</xref>] as implemented in the VASP code [<xref ref-type="bibr" rid="redalyc_344256704003_ref17">17</xref>], [<xref ref-type="bibr" rid="redalyc_344256704003_ref18">18</xref>]. The reference PAW atomic configurations were: <italic>5p<sup>6</sup> 5d<sup>4</sup> 6s<sup>1</sup>
</italic> for Ta and <italic>2s<sup>2</sup> 2p<sup>4</sup>
</italic> for O, where only states that are treated as valence electrons were listed. The cut-off energy in the plane-wave expansion was converged to a value of 520 eV.  </p>
<p> All the structural parameters for each one of the calculated volumes were optimized, by simultaneously minimizing the atomic forces and the components of the stress tensor, through the conjugate gradient algorithm. The integration in the first Brillouin zone was carried out using a 4x4x8 Monkhorst-Pack <bold>k</bold>-mesh with a Gaussian broadening of 0.01 eV for relaxation (the original forces were converged to 1 meV / <inline-graphic xlink:href="344256704003_gi5.png"/>). Subsequently, a calculation was made at a 4x4x8   -centered <bold>k</bold>-mesh for the total energy (the energy was converged to 1 meV/unit cell), the charge density, and the dielectric and optical properties.</p>
</sec>
<sec sec-type="methods">
<title>2.2 Calculation of
dielectric and optical properties</title>
<p>We calculated the static dielectric constant ε(0) using density functional perturbation theory
(DFPT) [<xref ref-type="bibr" rid="redalyc_344256704003_ref19">19</xref>], where (<xref ref-type="disp-formula" rid="e1">1</xref>) is the Sternheimer linear equation, was first solved for <inline-graphic xlink:href="344256704003_gi75.png"/>,
where <inline-graphic xlink:href="344256704003_gi76.png"/> is the periodic part of the auxiliary wave
function; <bold>
<italic>H(k),</italic>
</bold> the
effective Hamiltonian of an electron; є<italic>
<sub>nk,</sub>
</italic> the
Kohn-Sham energy; <italic>n</italic>, the
band; <italic>k</italic>, the Bloch wave vector; and <bold>
<italic>S(k)</italic>
</bold>, the
overlapping operator. Once this equation was solved, we determined the
first-order response of the wave functions <inline-graphic xlink:href="344256704003_gi77.png"/> to an externally applied field by solving the
linear equation (<xref ref-type="disp-formula" rid="e2">2</xref>), where  <inline-graphic xlink:href="344256704003_gi78.png"/> represents the microscopic optic change of the
Hamiltonian due to the variation of the wave functions to first-order, <inline-graphic xlink:href="344256704003_gi79.png"/> corresponds to the principal axes of the
macroscopic dielectric matrix, and <inline-graphic xlink:href="344256704003_gi80.png"/> is the polarization vector. Finally, with the
information obtained by solving (<xref ref-type="disp-formula" rid="e1">1</xref>) and (<xref ref-type="disp-formula" rid="e2">2</xref>), the static dielectric constant can
be determined using (<xref ref-type="disp-formula" rid="e3">3</xref>), where Ω is   the volume of the primitive cell and ωk are the k-point  weights,which are defined in such way that  theirsum equals 1.  The  optical properties    associated    with    inter-band transitions    was    determined    from    the calculation  of  the  imaginary part  of  the dielectric   tensor <inline-graphic xlink:href="344256704003_gi81.png"/> at   the   long wavelength     limit     (<inline-graphic xlink:href="344256704003_gi83.png"/>→0)     using     the methodology    developed    for    the    PAW method    [<xref ref-type="bibr" rid="redalyc_344256704003_ref19">19</xref>]. The    real    part    of    the frequency-dependent   dielectric   tensor   is obtained  from  the  imaginary  part  through the  Kramers-Kröning  relationship.  From the  knowledge  of  the  dielectric  tensor,  we have  calculated  the  generalized  refractive index  (<italic>ñ = n + ik</italic>)  and  the  transmittance explicitly  using  the  equations  in  [<xref ref-type="bibr" rid="redalyc_344256704003_ref20">20</xref>].  We did   not   include   the   spin-orbit   coupling (SOC)  because  the  Tantalum  atom,  which is   the   chemical   speciesthat   introduces relativistic    effects,    mostly    affects    the conduction  bands. The  main  contribution to the dielectric function is due to the ionic part,     which     is    obtained     using    the Sternheimer  equation,  where  the  occupied bands are theonly ones to be considered in this   calculation.   Asa   result, the   SOC becomes non-significant   to   estimate   the dielectric function in this case.</p>
<p>
<disp-formula id="e1">
<label>(1)</label>
<graphic xlink:href="344256704003_ee5.png" position="anchor" orientation="portrait"/>
</disp-formula>
</p>
<p>
<disp-formula id="e2">
<label>(2)</label>
<graphic xlink:href="344256704003_ee6.png" position="anchor" orientation="portrait"/>
</disp-formula>
</p>
<p>
<disp-formula id="e3">
<label>(3)</label>
<graphic xlink:href="344256704003_ee7.png" position="anchor" orientation="portrait"/>
</disp-formula>
</p>
</sec>
</sec>
<sec sec-type="results|discussion">
<title>3. RESULTS AND
DISCUSSION</title>
<sec sec-type="results|discussion">
<title>3.1 Crystal structure</title>
<p>λ-Ta<sub>2</sub>O<sub>5</sub>
is an orthorhombic model described by the space group Pbam with two formula unit per unit cell, where four Ta atoms are
located in the Wyckoff position (4g), while ten O atoms are distributed over
the Wyckoff positions (2a), (4g) and (4h). It has a crystal structure is build
up for a set of TaO<sub>6 </sub>octahedra where the Ta atom is located
approximately in the center of the octahedra and the O atoms, in the corners.
In addition, consecutive octahedra form chains that share the corners, as
illustrated in <xref ref-type="fig" rid="gf1">Fig 1</xref>.</p>
<p>
<fig id="gf1">
<label>Fig. 1.</label>
<caption>
<title>Crystal structure of λ -Ta<sub>2</sub>O<sub>5</sub>.
Purple and red circles represent Ta and O atoms, respectively.</title>
</caption>
<alt-text>Fig. 1. Crystal structure of λ -Ta2O5.
Purple and red circles represent Ta and O atoms, respectively.</alt-text>
<graphic xlink:href="344256704003_gf2.png" position="anchor" orientation="portrait"/>
<attrib>Source: Authors’ own work.</attrib>
</fig>
</p>
<p>At this point, it is very important to mention
that the orthorhombic symmetry was preserved during the relaxation process for
all the fixed volumes, which allowed us to find the equilibrium geometry. <xref ref-type="table" rid="gt1">Table
1</xref> presents the most important crystallographic parameters associated with the λ model. Clearly, our results of the calculation
with both functionals are in very good agreement with the optimized parameters
in the model by Lee et al.</p>
<p>
<table-wrap id="gt1">
<label>Table 1</label>
<caption>
<title>Calculated and experimental crystallographic
parameters of λ -Ta<sub>2</sub>O<sub>5</sub>.</title>
<p>The model in this work represents the values given in [<xref ref-type="bibr" rid="redalyc_344256704003_ref10">10</xref>].</p>
</caption>
<alt-text>Table 1 Calculated and experimental crystallographic
parameters of λ -Ta2O5.</alt-text>
<graphic xlink:href="344256704003_gt8.png" position="anchor" orientation="portrait"/>
<attrib>Source: Authors’
own work and [<xref ref-type="bibr" rid="redalyc_344256704003_ref10">10</xref>].</attrib>
</table-wrap>
</p>
</sec>
<sec sec-type="results|discussion">
<title>3.2 Electronic structure</title>
<p>The calculated dispersion relation for the  λ model is presented in <xref ref-type="fig" rid="gf2">Fig 2</xref>. The gap of this
orthorhombic model calculated with PBEsol and HSE06 was 2.09 eV and 3.7 eV,
respectively, where the HSE06 prediction is in good agreement with the value
reported by Lee et al. [<xref ref-type="bibr" rid="redalyc_344256704003_ref10">10</xref>] and the experimental gap reported for the L phase
(4.0 eV) [<xref ref-type="bibr" rid="redalyc_344256704003_ref21">21</xref>]. This is because excited state properties are better predicted by
explicitly orbital-dependent functionals, which include exact exchange such as
HSE06. On the other hand, we found that λ-Ta<sub>2</sub>O<sub>5</sub>
has a direct energy band gap, where the valence band maximum (VBM) and
conduction band minimum (CBM) are located in the high symmetry point Z = (0, 0,
1/2).</p>
<p>
<fig id="gf2">
<label>Fig. 2.</label>
<caption>
<title>Band structure of λ -Ta<sub>2</sub>O<sub>5</sub>.</title>
<p>Left: PBEsol eigenvalues. Right: HSE06 eigenvalues.</p>
</caption>
<alt-text>Fig. 2. Band structure of λ -Ta2O5.</alt-text>
<graphic xlink:href="344256704003_gf3.png" position="anchor" orientation="portrait"/>
<attrib>Source: Authors’ own work.</attrib>
</fig>
</p>
<p>A detailed analysis of the band structure
allowed us to determine that the valence band (VB) is a hybridization of Ta <italic>d</italic>-states and O <italic>p</italic>-states, where the latter present the greatest contribution to
VBM. On the other hand, the CBM is dominated by Ta <italic>d</italic>-states. Finally, we can observe from <xref ref-type="fig" rid="gf2">Fig. 2</xref> that HSE06 produces a
rigid band shift of the CB to higher energies with respect to VBM, while the VB
presents a slightly larger width compared to PBEsol. The topology of the band
structure is basically the same for both functionals.</p>
</sec>
<sec sec-type="results|discussion">
<title>3.3 Dielectric tensor</title>
<p>The dielectric function is second rank tensor,
for an orthorhombic crystal it only has three components different from zero: (ε<sub>xx</sub>, ε<sub>yy</sub>, ε<sub>zz</sub>).
<xref ref-type="fig" rid="gf3">Fig. 3</xref> (a-c) shows the diagonal components of the imaginary part of the
dielectric tensor (<inline-graphic xlink:href="344256704003_gi67.png"/>)
calculated with PBEsol and HSE06 functionals. In this case, it is easy to
identify some degree of anisotropy in the dielectric tensor. This situation can
be observed from the position of the main absorption peaks among its
components, which are slightly located at different energies. Furthermore, the
intensity of the main peak of the ε<sub>zz</sub> component is greater than the other two
components, which have fairly close values. Here, it is important to mention
that the main peaks in <xref ref-type="fig" rid="gf3">Fig. 3</xref> are associated with inter-band transitions
between O p-states in the VB and Ta <italic>d</italic>-states in the conduction band.</p>
<p>
<fig id="gf3">
<label>Fig. 3</label>
<caption>
<title>Non-zero components of the imaginary part of
dielectric tensor of λ-Ta<sub>2</sub>O<sub>5</sub>.</title>
<p>Blue and red lines represent PBEsol and HSE06 calculations, respectively.</p>
</caption>
<alt-text>Fig. 3 Non-zero components of the imaginary part of
dielectric tensor of λ-Ta2O5.</alt-text>
<graphic xlink:href="344256704003_gf4.png" position="anchor" orientation="portrait"/>
<attrib>Source: Authors’ own work.</attrib>
</fig>
</p>
<p>
<xref ref-type="table" rid="gt2">Table 2</xref> presents the calculated electronic (ε<sub>∞</sub>) and ionic contribution (ε<sub>0</sub>) to the static dielectric tensor
with PBEsol parametrization. Using these results, we were able to calculate the
directional average and obtain the static dielectric constant (ε(0) = ε<sub>∞</sub> + ε<sub>0</sub>), which equals 51. In this case,
our results cannot be directly compared with experimental data, since the
experimental value for the static dielectric constant of this type of
structures has not been reported. However, we can make an indirect comparison with
the calculation performed by Clima et al. [<xref ref-type="bibr" rid="redalyc_344256704003_ref22">22</xref>] for the orthorhombic phase
proposed by Ramprasad [<xref ref-type="bibr" rid="redalyc_344256704003_ref7">7</xref>], which reports the following values for the
contributions to the static dielectric constant: ε<sub>∞</sub>= 5.92 and ε<sub>0</sub> = 36. By comparing these values with our
calculation, we find that the ε<sub>∞</sub>    component is in good agreement with the value reported by Clima et al.; however, our calculated ε<sub>0</sub> is much higher than in the model described by
said authors. This is because the ionic contribution of the dielectric constant is strongly dependent
on the crystallographic system. Therefore, an orthorhombic model composed of
pentagonal bipyramids and distorted octahedra Clima et al.) is very different
from a Lambda model defined by distorted octahedra only.</p>
<p>
<table-wrap id="gt2">
<label>Table 2</label>
<caption>
<title>Calculated optical-frequency and
low-frequency dielectric tensor for λ-Ta<sub>2</sub>O<sub>5</sub>  

with PBEsol parametrization.</title>
</caption>
<alt-text>Table 2 Calculated optical-frequency and
low-frequency dielectric tensor for λ-Ta2O5  

with PBEsol parametrization.</alt-text>
<graphic xlink:href="344256704003_gt9.png" position="anchor" orientation="portrait"/>
<attrib>Source: Authors’ own
work.</attrib>
</table-wrap>
</p>
</sec>
<sec sec-type="results|discussion">
<title>3.4 Optical
properties</title>
<p>Once the dielectric tensor was calculated along
the three Cartesian directions, we obtained the generalized refractive index (<italic>ñ</italic>).
<xref ref-type="fig" rid="gf4">Fig. 4</xref> shows the refractive index <italic>n</italic>    and the extinction coefficient <italic>k</italic>. It
can be seen from this figure that the value calculated with PBEsol (HSE06) for<italic> n</italic> is 2.48 (2.02). In the literature, we did not
find a reported value of refractive index for this model. However, as in the
case of phase B, we can make an indirect comparison with the value reported for
an ultra-thin film of Ta<sub>2</sub>O<sub>5</sub> (<italic>n</italic>= 2.15) [<xref ref-type="bibr" rid="redalyc_344256704003_ref23">23</xref>], which is consistent with our
calculation. In addition, the extinction coefficient enabled us to observe
maximum absorption peaks at 6.1 eV and 11.3 eV (7.8 eV and 14.4 eV) with PBESol
(HSE06), which are in the region of strong absorption within the ultraviolet
region.</p>
<p>
<fig id="gf4">
<label>Fig. 4.</label>
<caption>
<title>a) Refractive index and b) extinction coefficient. Blue and red lines represent PBEsol and  

HSE06 calculations, respectively.</title>
</caption>
<alt-text>Fig. 4. a) Refractive index and b) extinction coefficient. Blue and red lines represent PBEsol and  

HSE06 calculations, respectively.</alt-text>
<graphic xlink:href="344256704003_gf5.png" position="anchor" orientation="portrait"/>
<attrib>Source: Authors’ own work.</attrib>
</fig>
</p>
<p>Finally, we calculated the transmittance (<xref ref-type="fig" rid="gf5">Fig
5</xref>). From this figure it can be observed that, in the visible region (between
0.1 and 1μm), the behavior of the transmittance is
constant with a value of 82% (88%) with PBESol (HSE06). This result allows us
to conclude that, in this region,  λ-Ta<sub>2</sub>O<sub>5</sub>
is a transparent semiconductor.</p>
<p>
<fig id="gf5">
<label>Fig. 5.</label>
<caption>
<title>Transmittance in the visible region. Blue and red lines represent PBEsol and HSE06
 

calculations, respectively. </title>
</caption>
<alt-text>Fig. 5. Transmittance in the visible region. Blue and red lines represent PBEsol and HSE06
 

calculations, respectively. </alt-text>
<graphic xlink:href="344256704003_gf6.png" position="anchor" orientation="portrait"/>
<attrib>Source: Authors’ own work.</attrib>
</fig>
</p>
</sec>
</sec>
<sec sec-type="conclusions">
<title>4.  CONCLUSIONS</title>
<p>In this work, we studied different
physical properties of an orthorhombic  λ-Ta<sub>2</sub>O<sub>5</sub>
model without oxygen vacancies.
Based on our calculations, we were able to conclude that the VB is a
hybridization of O p and Ta d-states, while a large percentage of
the CB is composed of Ta d-states.
Furthermore, under this model Ta<sub>2</sub>O<sub>5</sub> presents a direct
gap, where VBM and CBM are located in a high symmetry point Z = (0, 0,
1/2). In addition, we found that the
static dielectric constant, 51, is in good agreement with values reported in
other works. As a result, this novel material can be used to manufacture filters and resonators.
Finally, we calculated the transmittance and stablished that, in the visible
region, this semiconductor described by the λ model is a transparent material.</p>
</sec>
</body>
<back>
<ack>
<title>Acknowledgements</title>
<p>The computations were performed on Cluster
provided by Instituto Tecnológico Metropolitano (ITM). C. Valencia-Balvín. and
S. Pérez-Walton acknowledge the Faculty of Engineering at ITM. Jorge Osorio-Guillén thanks Universidad de
Antioquia.</p>
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